bc 846 ... bc 850 1 nov-11-1999 npn silicon af transistors ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? low noise between 30 hz and 15 khz ? complementary types: bc 856, bc 857, bc 858 bc 859, bc 860 (pnp) 1 2 3 vps05161 type marking pin configuration package bc 846a bc 846b bc 847a bc 847b bc 847c bc 848a bc 848b bc 848c bc 849b bc 849c bc 850b bc 850c 1as 1bs 1es 1fs 1gs 1js 1ks 1ls 2bs 2cs 2fs 2gs 1 = b b = 1 b = 1 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23 sot-23
bc 846 ... bc 850 2 nov-11-1999 maximum ratings parameter symbol bc 846 bc 847 bc 850 bc 848 bc 849 unit collector-emitter voltage v ceo 65 45 30 v collector-base voltage v cbo 80 50 30 collector-emitter voltage v ces 80 50 30 emitter-base voltage v ebo 6 6 5 dc collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 peak emitter current 200 i em total power dissipation , t s = 71 c p tot 330 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 310 k/w junction - soldering point r thjs 240 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc 846 bc 847/850 bc 848/849 v (br)ceo 65 45 30 v - - - - - - 80 50 30 - - - bc 846 bc 847/850 bc 848/849 v (br)cbo collector-base breakdown voltage i c = 10 a, i b = 0 - - - 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bc 846 ... bc 850 3 nov-11-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit max. typ. min. dc characteristics collector-emitter breakdown voltage i c = 10 a, v be = 0 bc 846 bc 847/850 bc 848/849 80 50 30 - - - v - - - v (br)ces 6 5 emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo bc 846/847 bc 848-850 - - - - na i cbo - - 15 collector cutoff current v cb = 40 v, i e = 0 5 - - i cbo collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c a dc current gain 1) i c = 10 a, v ce = 5 v - - - - - - - 140 250 480 h fe -group a h fe -group b h fe -group c h fe 110 200 420 h fe h fe -group a h fe -group b h fe -group c dc current gain 1) i c = 2 ma, v ce = 5 v 180 290 520 220 450 800 v cesat collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma - - 90 200 250 600 mv base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 900 - - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 580 - 660 - 700 770 1) pulse test: t 300 s, d = 2%
bc 846 ... bc 850 4 nov-11-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values unit symbol min. max. typ. ac characteristics f t - mhz - transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz 250 - pf collector-base capacitance v cb = 10 v, f = 1 mhz c cb 3 - 8 - c eb - emitter-base capacitance v eb = 0.5 v, f = 1 mhz short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz k ? - - - 2.7 4.5 8.7 - - - h fe -gr. a h fe -gr. b h fe -gr. c h 11e 10 -4 open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c 1.5 2 3 - - - - - - h 12e short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 21e - - - 200 330 600 - - - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 22e - - - 18 30 60 - - - s noise figure i c = 100 a, v ce = 5 v, r s = 1 k ? , f = 1 khz, ? f = 200 hz 4 1.2 - f db bc 849 bc 850 0.135 v equivalent noise voltage i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 10 ... 50 hz bc 850 v n - -
bc 846 ... bc 850 5 nov-11-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00360 150 50 100 ?c t as t 100 200 300 mw 400 p tot t t ; as collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 0 4 10 5 10 10 ehp00361 v cb0 c eb0 v 6 2 eb0 v eb c 8 10 pf 12 cb0 c -1 0 1 c cb ( ( ) bc 846...850 ) permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00362 -6 0 10 5 d = 5 10 1 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00363 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c
bc 846 ... bc 850 6 nov-11-1999 collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00415 t a 10 na 10 cb0 10 10 4 3 2 1 0 max typ 5 5 5 ? c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00367 v cesat 10 ma 10 c 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00365 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00364 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c
bc 846 ... bc 850 7 nov-11-1999 h parameter h e = f ( v ce ) normalized i c = 2ma 0 0102030 ehp00369 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h h h h e e e e 21 11 12 22 c h parameter h e = f ( i c ) normalized v ce = 5v 10 10 10 ehp00368 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c noise figure f = f ( v ce ) i c = 0.2ma, r s = 2k ? , f = 1khz 0 10 10 10 10 bc 846...850 ehp00370 v ce f v 10 5 15 db 20 -1 0 1 2 5 noise figure f = f ( f ) i c = 0.2ma, v ce = 5v, r s = 2k ? 10 10 10 10 bc 846...850 ehp00371 f khz db -2 -1 1 2 20 10 0 5 15 f 0 10
bc 846 ... bc 850 8 nov-11-1999 noise figure f = f ( i c ) v ce = 5v, f = 1khz 10 10 10 10 bc 846...850 ehp00373 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ??? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 120hz 10 10 10 10 bc 846...850 ehp00372 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ??? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 10khz 10 10 10 10 bc 846...850 ehp00374 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ? ? ? s r ? ? c
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